For wearable devices, batteries with longer battery life are critical. Hosain Rahman, chief executive of hardware startup Jawbone, believes: "Computing is not a problem, and all wearable devices are limited by battery technology." Although battery technology has not developed as fast as displays and other technologies, some leading wearable companies still hope to achieve a breakthrough in battery technology in the next few years. Soulaiman Itani, CEO of Atheer Labs, said: "In the next five years, there will be other breakthroughs, such as remote charging, and it will have the next big leap forward to break its dependence on batteries. But for now, batteries are the biggest challenge. , It needs to be small enough and enough. " Itani believes that the current stage of wearable computing is comparable to the smartphone in 2005. Itani said: "It is equivalent to the Palm stage, everyone needs to wait for the iPhone to come out." Apple launched the iPhone in 2007, but Palm Pilots have been available before then. Apple CEO Cook has previously stated that the era of wearable computing is ready for exploration, but he refused to confirm whether Apple is developing smart watches. Apple and Google have the most popular smartphone operating systems, have the strength to stimulate the development of new markets, and have the ability to control it because they have a large user base and application group. Forrester analysts believe that if Apple enters the market, it will accelerate development, because Apple is a "market maker", any Apple equipment can sell tens of millions of units. Rectifier Diode A semiconductor device used to convert alternating current into direct current. The most important characteristic of a diode is its unidirectional conductivity. In the circuit, current can only flow from the positive pole of the diode and the negative pole flows out. Usually it contains a PN junction with two terminals, positive and negative. Its structure is shown in the figure. The carriers in the P region are holes, and the carriers in the N region are electrons, forming a certain barrier in the P region and the N region. When the applied voltage makes the P region positive with respect to the N region, the barrier is lowered, and the storage carriers are generated near the two sides of the barrier, which can pass a large current and have a low voltage drop (typically 0.7V), which is called positive. Wizard status. If the opposite voltage is applied, the barrier is increased to withstand a high reverse voltage, and a small reverse current (called reverse leakage current) is called a reverse blocking state. The rectifier diode has significant unidirectional conductivity. The rectifier diode can be fabricated from materials such as semiconductor germanium or silicon. The silicon rectifier diode has a high breakdown voltage, a small reverse leakage current, and good high temperature performance. Usually high-voltage and high-power rectifier diodes are made of high-purity single crystal silicon (it is easy to reverse breakdown when doping more). This device has a large junction area and can pass a large current (up to thousands of amps), but the operating frequency is not high, generally below several tens of kilohertz. Rectifier diodes are mainly used in various low-frequency half-wave rectification circuits. If full-wave rectification is required, they must be connected to a Rectifier Bridge. Rectifier Diode,Smd Diode,Smd International Rectifier,General Rectifier Dongguan Agertech Technology Co., Ltd. , https://www.agertechcomponents.com