China Gallium Semiconductor: Focus on substrate growth, specialization towards division of labor

China Gallium Semiconductor is the first company in China to develop and produce gallium nitride (GaN) substrate materials. "I firmly believe that homogenous extension will become the mainstream in the future. Before this, the company will introduce sapphire patterned substrates into the market. At present, the company's products include GaN substrate, GaN/Al2O3 composite substrate, sapphire patterned substrate, laser stripping equipment, and we are also developing new GaN substrate materials." Zhang Guoyi, general manager of China Gallium Semiconductor, introduced the company positioning For professional substrate preparation companies, we firmly believe that we will focus on leading the future GaN substrate materials market.

What is homogenization extension? Why will it dominate the future market? What is the price trend of sapphire graphic substrate? With a series of questions, Gaogong LED reporter went into China Gallium Semiconductor and conducted in-depth discussions with Dr. Zhang Guoyi.

Homogeneous extension will become the mainstream

High-tech LED: China-German semiconductor is a company specializing in the production of substrates. The substrate products produced include GaN substrate, GaN/Al2O3 composite substrate, and patterned sapphire substrate. How is the company determined the technical route? How do you view the future development of various substrate products?

Zhang Guoyi: Epitaxy includes homoepitaxial and heteroepitaxial. Homogeneous epitaxy refers to the same epitaxial layer grown on the same substrate material, such as silicon substrate grown silicon, GaN substrate epitaxially grown GaN, and sapphire substrate. Or other substrate growth GaN is heteroepitaxial. The technology that is commonly used today is to grow GaN epitaxy using substrates such as sapphire and silicon carbide. But in principle, the best technique is homoepitaxial, that is, GaN epitaxy is grown using a GaN substrate. The main problem with GaN substrates today is that the cost is too high and the gallium resources are relatively limited.

The establishment of China-German semiconductors is based on the consideration of future development trends. We hope to move toward homogenous extension and move toward GaN/Al2O3 composite substrates. The surface of the composite substrate is GaN, and the underside is sapphire. This structure is the same as the GaN substrate grown GaN epitaxy. The composite substrate not only reduces the amount of gallium, but also satisfies the growth requirements of homoepitaxial growth. I call it the generalized homoepitaxial extension.

High-tech LED: How is the company laid out in the promotion of products?

Zhang Guoyi: Although we have GaN substrate and composite substrate technology, we currently use fewer customers and the market is not mature enough. In 2012, the composite substrate was in the incubation period, and it was not promoted vigorously. The transformation of technology also required a transition period. The current market trend is a sapphire patterned substrate. The luminous efficiency of the patterned substrate can be increased by 20%-30% compared with the conventional substrate, and the internal quantum efficiency can be improved and the crystal quality can be improved. Therefore, before the composite substrate becomes mainstream, it must be a patterned substrate (PSS substrate). We use the sapphire graphic substrate as a product that has recently entered the market.

We also have a product - laser stripping equipment, to promote composite substrates, the need to strip GaN and sapphire, sapphire reuse (2-5 times) transferred to other substrates, the use of laser stripping equipment. There are two major types of laser stripping equipment in the world, gas lasers and solid-state lasers. Now we are only doing solid-state lasers. The stability, efficiency and damage of gas lasers are not as good as those of solid-state lasers. The future development is definitely a solid-state laser.

High-tech LED: You talk about the future development of the mainstream GaN substrate, but the most used is still the sapphire substrate. And the customer has a habit of using it, and it takes time for him to change the habit of production. The price of sapphire substrates is also constantly falling. How long does it take for GaN substrates to become the mainstream of the market?

Zhang Guoyi: From the perspective of the substrate, the cost of the composite substrate is definitely higher than that of the sapphire substrate, but the advantages of the composite substrate are significant. First, the composite substrate can increase the productivity. The process of sapphire growth LED epitaxial structure takes seven hours. The composite substrate can greatly simplify the production process, and the production capacity can be doubled in less than three hours. At the same time, it can also save gas materials such as MO sources.

Secondly, the composite substrate can be used to prepare the upper and lower electrode structures without etching the n-electrode structure, which can effectively summarize the light-emitting area of ​​the LED, reduce the preparation process, and increase mass production.

Third, the LED has such a phenomenon that the current LED is increased, and a peak is quickly reached, and then the current is increased, and the efficiency is lowered. The sapphire substrate has a low thermal conductivity, heat is not dissipated, and efficiency is sure to drop. The composite substrate can prepare the upper and lower electrode structure LEDs, and the metal substrate material with high thermal conductivity can be used, the current distribution is very uniform, and the whole luminous efficiency can be further improved.

All of these calculations, the cost of the composite substrate is 30% lower than with the sapphire substrate, this is not my own view, there is such a road map in the world. 2010 is the first year of heterogeneous extension to homogenous extension. There have been such signs in 2010, but the rate of increase is not fast enough, and there is still a stage. Depending on the development of the GaN substrate composite substrate technology and the improvement of the customer's technology, the future trend will definitely be a composite substrate.

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